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Compound semiconductor
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#	Item
11	Publications that quote the use of OAR atom sources Nitrides (AlN, GaN, InN) 1. Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films. W Hoke P Lemonias & D Weir. J Crystal Growth 111 Add to Reading List Source URL: www.oaresearch.co.uk Language: English - Date: 2015-04-23 17:42:57 Compound semiconductors Inorganic compounds Semiconductor device fabrication Gallium nitride Epitaxy Gallium arsenide Molecular beam epitaxy Metalorganic vapour phase epitaxy Superlattice Chemistry Thin film deposition Semiconductor growth
12	In The LAB Semiconducting the Future Microelectronic devices group explores new materials for future computer chips and high-power transistors As computer-chip makers struggle to build faster Add to Reading List Source URL: www-mtl.mit.edu Language: English - Date: 2013-04-16 14:14:58 Inorganic compounds Indium gallium arsenide Gallium nitride Gallium arsenide Transistor Integrated circuit Field-effect transistor Gallium Light-emitting diode Chemistry Semiconductor devices Compound semiconductors
13	Photon Factory Activity Report 2006 #24 Part BChemistry 7C/2006G081 Manganese oxide cluster in manganese doped gallium oxynitride Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2010-01-05 10:33:34 Chemical elements Inorganic compounds Manganese compounds Compound semiconductors Gallium Magnetic semiconductor Light-emitting diode Manganese oxide Manganese Chemistry Matter Oxides
14	Etching Purposes of High-Frequency Compound Semiconductors 1. Description of Use Etching of high-frequency compound semiconductors is a processing method to produce semiconductor transistors used for satellite communic Add to Reading List Source URL: www.pops.int Language: English - Date: 2008-05-05 06:09:37 Persistent organic pollutants Perfluorinated compounds Sulfonic acids Perfluorooctanesulfonic acid Materials science Transistor Microwave Isotropic etching Industrial etching Technology Chemistry Etching
15	Media Release Tuesday 6th December 2011 Sharp Develops Solar Cell with World’s Highest conversion Efficiency of 36.9% Achieved with triple-Junction Compound Solar Cell Add to Reading List Source URL: www.sharp.net.au Language: English - Date: 2011-12-12 21:24:50 Technology Photovoltaics Solar cells Semiconductor devices Solar vehicle Gallium arsenide Solar panel Sharp Solar Energy Chemistry Energy conversion
16	February 3, 2015 Sumitomo Chemical to Acquire Compound Semiconductor Materials Business from Hitachi Metals Sumitomo Chemical has agreed today with Hitachi Metals, Ltd. to acquire their compound semiconductor materials b Add to Reading List Source URL: www.sumitomo-chem.co.jp Language: English - Date: 2015-02-03 00:52:15 Semiconductor device fabrication Optoelectronics Gallium nitride Nitrides Sumitomo Chemical Gallium arsenide Light-emitting diode Gallium Semiconductor Chemistry Compound semiconductors Inorganic compounds
17	BioSyM IRG Report to SMART SAB 2010 Add to Reading List Source URL: smart.mit.edu Language: English - Date: 2014-11-16 01:30:42 Electronics Compound semiconductors Inorganic compounds Integrated circuits Light-emitting diode Gallium nitride CMOS Gallium arsenide Transistor Chemistry Electronic engineering Semiconductor devices
18	Microsoft Word - F-BRIDGE - D121 - revision 0 - Report on the behaviour of defects, FP and O in UN and _U,Zr_N - validated.doc Add to Reading List Source URL: www.f-bridge.eu Language: English - Date: 2013-04-23 06:25:58 Frenkel defect Interstitial defect Schottky defect Vacancy defect Crystal structure Chemical bond Non-stoichiometric compound Semiconductor Wigner effect Chemistry Crystallographic defects Materials science
19	TRANSFORMATION AND STORAGE OF SOLAR ENERGY 775 CHIMIA 2007, 61, No. 12 doi:chimia Add to Reading List Source URL: www.quantsol.org Language: English - Date: 2009-03-18 07:49:21 Semiconductor devices Compound semiconductors Inorganic compounds Indium gallium arsenide Multijunction photovoltaic cell Gallium arsenide Indium gallium phosphide Band gap Shockley–Queisser limit Chemistry Solar cells Energy conversion
20	Microsoft Wordrevised Add to Reading List Source URL: rs.ieee.org Language: English - Date: 2011-06-08 19:34:02 Electronics Compound semiconductors Inorganic compounds Semiconductor device fabrication Materials science Reliability Light-emitting diode Hot carrier injection Gallium nitride Chemistry Electronic engineering Semiconductors

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